Germanium Polycrystalline Parameters
| Name | Unit | Specification | |
Growth Method | inch | CZ | |
Conduction Type | (n-type) | (p-type) | |
| Adulterate | As,Sb | Ga | |
| Diameter | 2 ”，3“，4'' and 6” | ||
Crystal Orientation | (100)±0.5° | ||
| OF/IF | US,EJ | ||
Laser Marking | Customized according to customer requirements | ||
| Thickness | um | (175-500)±25 | |
Resistivity (room temperature) | ohm-cm | 0.005-30 | 0.005-0.04 |
Dislocation density (EPD) | /cm2 | ≤300 | ≤300 |
| TTV | um | ≤15 | ≤15 |
| WARP | um | ≤25 | ≤25 |
| Back roughness(Ra) | um | <0.1 | <0.1 |
| Main/Back side | Side1/side2 | E/E, P/E ,P/D (E=etching，P=polishing，G=grind) | |
| Out of the box | YES | ||
| Package | Single box or multiple box | ||
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