Parameters of germanium single crystal
| Growth Method | VGF | |
| Dopant | P-type:Ga | N-type:As |
| Wafer Shape | Round(DIA2"、3、4"、6") | |
| Surface Orientation | (100)±0.5°(111)±0.5° | |
Other Orientations maybe available upon request | ||
| Resistivity (Q.cm) | As Required | |
Etch Pitch Density (cm2) | ≤5000，≤500 | |
| Thickness (um) | 175 Or 500+25 Or As Required | |
| TTV[P/P](um) | ≤10 | |
| WARP(um ) | ≤15 | |
| OFF(mm) | 32.5±1 | |
| If needed by customer | ||
Surface | E/E, P/E, P/G | |
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